(China (Mainland))
Product Summary
Using Novel Field Stop IGBT Technology, Fairchilds FGH40N60SFD Field Stop IGBT offers the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Parametrics
FGH40N60SFD absolute maximum ratings: (1)VCES, Collector to Emitter Voltage: 600 V; (2)VGES, Gate to Emitter Voltage: ± 20 V; (3)IC: Collector Current @ TC = 25℃: 80 A; Collector Current @ TC = 100℃: 40 A; (4)ICM, Pulsed Collector Current @ TC = 25℃: 120 A; (5)PD: Maximum Power Dissipation @ TC = 25℃: 290 W; Maximum Power Dissipation @ TC = 100℃: 116 W; (6)TJ, Operating Junction Temperature: -55 to +150 ℃; (7)Tstg, Storage Temperature Range: -55 to +150 ℃; (8)TL, Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds: 300 ℃.
Features
FGH40N60SFD features: (1)High current capability; (2)Low saturation voltage: VCE(sat) =2.3V @ IC = 40A; (3)High input impedance; (4)Fast switching; (5)RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FGH40N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 40A Field Stop |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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FGH40N60SF |
Other |
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Data Sheet |
Negotiable |
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FGH40N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 40A Field Stop |
Data Sheet |
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FGH40N60SMD |
Fairchild Semiconductor |
IGBT Transistors 600V, 40A Field Stop IGBT |
Data Sheet |
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FGH40N60SMDF |
Fairchild Semiconductor |
IGBT Transistors 600V/40A Field Stop IGBT ver. 2 |
Data Sheet |
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FGH40N60UF |
Other |
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Data Sheet |
Negotiable |
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FGH40N60UFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 40A Field Stop |
Data Sheet |
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