Product Summary
Using Novel Field Stop IGBT Technology, the FGH60N60SFD Field Stop IGBT offers the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Parametrics
FGH60N60SFD absolute maximum ratings: (1)VCES, Collector to Emitter Voltage: 600 V; (2)VGES, Gate to Emitter Voltage: ± 20 V; (3)IC: Collector Current @ TC = 25℃: 120 A; Collector Current @ TC = 100℃: 60 A; (4)ICM, Pulsed Collector Current @ TC = 25℃: 180 A; (5)PD: Maximum Power Dissipation @ TC = 25℃: 378 W; Maximum Power Dissipation @ TC = 100℃: 151 W; (6)TJ, Operating Junction Temperature: -55 to +150 ℃; (7)Tstg, Storage Temperature Range: -55 to +150 ℃; (8)TL, Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds: 300 ℃.
Features
FGH60N60SFD features: (1)High current capability; (2)Low saturation voltage: VCE(sat) =2.3V @ IC = 60A; (3)High input impedance; (4)Fast switching; (5)RoHS compliant.
Diagrams
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FGH60N60SFD |
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FGH60N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors N-Ch/ 60A 600V FS |
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