Product Summary

Using Novel Field Stop IGBT Technology, the FGH60N60SFD Field Stop IGBT offers the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

Parametrics

FGH60N60SFD absolute maximum ratings: (1)VCES, Collector to Emitter Voltage: 600 V; (2)VGES, Gate to Emitter Voltage: ± 20 V; (3)IC: Collector Current @ TC = 25℃: 120 A; Collector Current @ TC = 100℃: 60 A; (4)ICM, Pulsed Collector Current @ TC = 25℃: 180 A; (5)PD: Maximum Power Dissipation @ TC = 25℃: 378 W; Maximum Power Dissipation @ TC = 100℃: 151 W; (6)TJ, Operating Junction Temperature: -55 to +150 ℃; (7)Tstg, Storage Temperature Range: -55 to +150 ℃; (8)TL, Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds: 300 ℃.

Features

FGH60N60SFD features: (1)High current capability; (2)Low saturation voltage: VCE(sat) =2.3V @ IC = 60A; (3)High input impedance; (4)Fast switching; (5)RoHS compliant.

Diagrams

FGH60N60SFD diagram

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FGH60N60SFD
FGH60N60SFD

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Data Sheet

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FGH60N60SFDTU
FGH60N60SFDTU

Fairchild Semiconductor

IGBT Transistors N-Ch/ 60A 600V FS

Data Sheet

0-1: $4.52
1-25: $3.93
25-100: $3.71
100-250: $3.41