Product Summary

Features

IGBT+ DIODE,1200V,3A,TO247; Transistor Type:IGBT; DC Collector Current:3A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40C to +150C ;RoHS Compliant: Yes

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IKW03N120H2
IKW03N120H2

Infineon Technologies

IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

Data Sheet

0-1: $2.18
1-10: $1.94
10-100: $1.60
100-250: $1.44
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IKW03N120H2
IKW03N120H2

Infineon Technologies

IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

Data Sheet

0-1: $2.18
1-10: $1.94
10-100: $1.60
100-250: $1.44
IKW08T120
IKW08T120

Infineon Technologies

IGBT Transistors LOW LOSS DuoPack 1200V 8A

Data Sheet

0-1: $3.26
1-10: $2.72
10-100: $2.06
100-250: $1.96