Product Summary
Features
IGBT+ DIODE,1200V,3A,TO247; Transistor Type:IGBT; DC Collector Current:3A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40C to +150C ;RoHS Compliant: Yes
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IKW03N120H2 |
Infineon Technologies |
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IKW03N120H2 |
Infineon Technologies |
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A |
Data Sheet |
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IKW08T120 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 8A |
Data Sheet |
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